Our very wide range offer includes:
Epitaxy structures
made out of the following materials: GaN, AlInGaN, AlN, InAlGaAs, SiC, graphene.
Deposited on different substrates
such as: bulk GaN, sapphire, SiC, Si, InP, GaAs.
More sophisticated epitaxy structures
such as: LEDs, lasers, strained QW edge emitting lasers, HEMTs, Schottky diodes, JFETs, MISFETs, quantum dots, VCSELs, varactors, photodetectors, passive waveguides, and others.
Seen Semicondutors:
In the creation process of the final product we cooperate with a number of selected leading epitaxy laboratories located in Poland.
We offer 20 years of epitaxy growers’ experience and the know-how allowing to manufacture structures of the world’s highest parameters.
We have access to the best quality GaN substrates in the world with dislocation density of 104/cm2 both n-type and SI type (resistivity 109-1012 ohm*cm).
We offer attractive prices.
